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82C86H
March 1997
CMOS Octal Bus Transceiver
Description
The Intersil 82C86H is a high performance CMOS Octal Transceiver manufactured using a self-aligned silicon gate CMOS process (Scaled SAJI IV). The 82C86H provides a full eight-bit bi-directional bus interface in a 20 lead package. The Transmit (T) control determines the data direction. The active low output enable (OE) permits simple interface to the 80C86, 80C88 and other microprocessors. The 82C86H has gated inputs, eliminating the need for pull-up/pull-down resistors and reducing overall system operating power dissipation.
Features
* Full Eight Bit Bi-Directional Bus Interface * Industry Standard 8286 Compatible Pinout * High Drive Capability - B Side IOL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA - A Side IOL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mA * Three-State Outputs * Propagation Delay . . . . . . . . . . . . . . . . . . . . . 35ns Max. * Gated Inputs - Reduce Operating Power - Eliminate the Need for Pull-Up Resistors * Single 5V Power Supply * Low Power Operation . . . . . . . . . . . . . . . ICCSB = 10A * Operating Temperature Range - C82C86H . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC - I82C86H . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC - M82C86H . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
Ordering Information
PART NUMBER 5MHz CP82C86H-5 IP82C86H-5 CS82C86H-5 IS82C86H-5 CD82C86H-5 ID82C86H-5 MD82C86H-5/B 59628757701RA MR82C86H-5/B 596287577012A 8MHz PACKAGE TEMP. RANGE 0oC to +70oC -40oC 0oC to +85oC PKG. NO. E20.3 E20.3 N20.35 N20.35 F20.3
CP82C86H 20 Ld PDIP IP82C86H CS82C86H 20 Ld PLCC IS82C86H CD82C86H 20 Ld CERDIP ID82C86H SMD # 20 Pad CLCC SMD #
to
+70oC +85oC
-40oC 0oC
to
to
+70oC
-40oC to +85oC F20.3 -55oC to +125oC F20.3 F20.3 -55oC to +125oC J20.A J20.A
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number
2977.1
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82C86H Pinouts
82C86H (PDIP, CERDIP) TOP VIEW 82C86H (PLCC, CLCC) TOP VIEW
VCC
TRUTH TABLE T X OE H L L A Hi-Z I O B Hi-Z O I
A2
A1
A0
B0
A0 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 OE 9 GND 10
20 VCC 19 B0 18 B1 17 B2 16 B3 15 B4 14 B5 13 B6 12 B7 11 T A3 4 A4 5 A5 6 A6 7 A7 8
H L
18 B1 17 B2 16 B3 15 B4 14 B5
3
2
1
20
19
H L I O X Hi-Z
= Logic One = Logic Zero = Input Mode = Output Mode = Don't Care = High Impedance PIN NAMES
PIN
9 OE 10 GND 11 T 12 B7 13 B6
DESCRIPTION Local Bus Data I/O Pins System Bus Data I/O Pins Transmit Control Input Active Low Output Enable
A0-A7 B0-B7 T OE
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82C86H Functional Diagram
A0 B0
Decoupling Capacitors
The transient current required to charge and discharge the 300pF load capacitance specified in the 82C86H/87H data sheet is determined by:
I = C L ( dv dt ) (EQ. 1)
A1 A2 A3 A4 A5 A6 A7
B1 B2 B3 B4 B5 B6 B7
Assuming that all outputs change state at the same time and that dv/dt is constant;
(V CC x 80% ) I = C L -----------------------------------tR tF (EQ. 2)
where tR = 20ns, VCC = 5.0V, CL = 300pF on each eight outputs.
I = ( 80 x 300 x 10 = 480mA
- 12
) x ( 5.0V x 0.8 ) ( 20 x 10
-9
)
(EQ. 3)
OE T VCC P VCC
Gated Inputs
During normal system operation of a latch, signals on the bus at the device inputs will become high impedance or make transitions unrelated to the operation of the latch. These unrelated input transitions switch the input circuitry and typically cause an increase in power dissipation in CMOS devices by creating a low resistance path between VCC and GND when the signal is at or near the input switching threshold. Additionally, if the driving signal becomes high impedance ("float" condition), it could create an indeterminate logic state at the inputs and cause a disruption in device operation. The Intersil 82C8X series of bus drivers eliminates these conditions by turning off data inputs when data is latched (STB = logic zero for the 82C82/83H) and when the device is disabled (OE = logic one for the 82C86H/87H). These gated inputs disconnect the input circuitry from the VCC and ground power supply pins by turning off the upper P-channel and lower N-channel (See Figures 1 and 2). No current flow from VCC to GND occurs during input transitions and invalid logic states from floating inputs are not transmitted. The next stage is held to a valid logic level internal to the device. D.C. input voltage levels can also cause an increase in ICC if these input levels approach the minimum VIH or maximum VIL conditions. This is due to the operation of the input circuitry in its linear operating region (partially conducting state). The 82C8X series gated inputs mean that this condition will occur only during the time the device is in the transparent mode (STB = logic one). ICC remains below the maximum ICC standby specification of 10A during the time inputs are disabled, thereby greatly reducing the average power dissipation of the 82C8X series devices.
N STB DATA IN
P
P INTERNAL DATA N
N
FIGURE 1. 82C82/83H
VCC
P OE P DATA IN VCC P N N N INTERNAL DATA
FIGURE 2. 82C86H/87H GATED INPUTS
This current spike may cause a large negative voltage spike on VCC which could cause improper operation of the device. To filter out this noise, it is recommended that a 0.1F ceramic disc capacitor be placed between VCC and GND at each device, with placement being as near to the device as possible.
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82C86H
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V Input, Output or I/O Voltage . . . . . . . . . . . . GND -0.5V to VCC +0.5V ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance (Typical) JA (oC/W) JC (oC/W) CERDIP Package . . . . . . . . . . . . . . . . 70 16 CLCC Package . . . . . . . . . . . . . . . . . . 80 20 PDIP Package . . . . . . . . . . . . . . . . . . . 75 N/A PLCC Package . . . . . . . . . . . . . . . . . . 75 N/A Maximum Storage Temperature Range . . . . . . . . . -65oC to +150oC Maximum Junction Temperature Hermetic Package . . . . . . . +175oC Maximum Junction Temperature Plastic Package. . . . . . . . . +150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC (PLCC - Lead Tips Only)
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range C82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC I82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC M82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
VCC = 5.0V 10%; TA = 0oC to +70oC (C82C86H); TA = -40oC to +85oC (I82C86H); TA = -55oC to +125oC (M82C86H) MIN 2.0 2.2 0.8 MAX UNITS V V V TEST CONDITIONS C82C86H, I82C86H M82C86H (Note 1)
SYMBOL VIH
PARAMETER Logical One Input Voltage
VIL VOH
Logical Zero Input Voltage Logical One Output Voltage B Outputs A Outputs A or B Outputs
3.0 3.0 VCC -0.4
V V V
IOH = -8mA IOH = -4mA IOH = -100A
VOL
Logical Zero Output Voltage B Outputs A Outputs 0.45 0.45 -10.0 -10.0 10.0 10.0 10 1 V V A A A mA/MHz IOL = 20mA IOL = 12mA VIN = GND or VCC DIP Pins 9, 11 VO = GND or VCC, OE VCC -0.5V DIP Pins 1 - 8, 12 - 19 VIN = VCC or GND, VCC = 5.5V, Outputs Open TA = +25oC, Typical (See Note 2)
II IO ICCSB ICCOP NOTES:
Input Leakage Current Output Leakage Current Standby Power Supply Current Operating Power Supply Current
1. VIH is measured by applying a pulse of magnitude = VIH(MIN) to one data input at a time and checking the corresponding device output for a valid logical "1" during valid input high time. Control pins (T, OE) are tested separately with all device data input pins at VCC -0.4 2. Typical ICCOP = 1mA/MHz of read/ cycle time. (Example: 1.0s read/write cycle time = 1mA).
Capacitance
SYMBOL CIN
TA = +25oC PARAMETER Input Capacitance B Inputs A Inputs 18 14 pF pF Freq = 1MHz, all measurements are referenced to device GND TYPICAL UNITS TEST CONDITIONS
4-320
82C86H
AC Electrical Specifications
VCC = 5.0V 10%; Freq = 1MHz TA = 0oC to +70oC (C82C86H); TA = -40oC to +85oC (I82C86H); TA = -55oC to +125oC (M82C86H) NOTE 4 82C86H MAX 82C86H-5 MAX
SYMBOL (1) TIVOV
PARAMETER Input to Output Delay Inverting Non-Inverting
MIN
UNITS
TEST CONDITIONS Notes 1, 2
5 5 5 10 5 10 -
30 32 30 50 20
35 35 35 65 20
ns ns ns ns ns ns ns Notes 1, 2 Notes 1, 2 Notes 1, 2 Notes 1, 2 Notes 1, 2 Note 3
(2) (3) (4) (5) (6) (7)
TEHTV TTVEL TEHOZ TELOV TR, TF TEHEL
Transmit/Receive Hold Time Transmit/Receive Setup Time Output Disable Time Output Enable Time Input Rise/Fall Times Minimum Output Enable High Time 82C86H 82C86H-5
30 35
-
-
ns ns
NOTES: 1. All AC parameters tested as per test circuits and definitions in timing waveforms and test load circuits. Input rise and fall times are driven at 1ns/V. 2. Input test signals must switch between VIL - 0.4V and VIH +0.4V. 3. A system limitation only when changing direction. Not a measured parameter. 4. 82C86H is available in commercial and industrial temperature ranges only. 82C86H-5 is available in commercial, industrial and military temperature ranges.
Timing Waveform
TR, TF (6) INPUTS 2.0V 0.8V TEHEL (7) OE (1) TIVOV OUTPUTS (4) TEHOZ VOH -0.1V VOL +0.1V TEHTV (2) T TELOV (5) 3.0V 0.45V TTVEL (3)
NOTE: All timing measurements are made at 1.5V unless otherwise noted.
4-321
82C86H Test Load Circuits
A SIDE OUTPUTS TIVOV LOAD CIRCUIT
2.36V 160 OUTPUT 100pF (SEE NOTE) TEST POINT OUTPUT 100pF (SEE NOTE)
TELOV OUTPUT HIGH ENABLE LOAD CIRCUIT
1.5V 375 TEST POINT
TELOV OUTPUT LOW ENABLE LOAD CIRCUIT
1.5V 91 OUTPUT 100pF (SEE NOTE) TEST POINT
TEHOZ OUTPUT LOW/HIGH DISABLE LOAD CIRCUIT
2.36V 160 OUTPUT 50pF (SEE NOTE) TEST POINT
B SIDE OUTPUTS TIVOV LOAD CIRCUIT
2.27V 91 OUTPUT 300pF (SEE NOTE) TEST POINT OUTPUT 300pF (SEE NOTE)
TELOV OUTPUT HIGH ENABLE LOAD CIRCUIT
1.5V 180 TEST POINT
TELOV OUTPUT LOW ENABLE LOAD CIRCUIT
1.5V 51 OUTPUT 300pF (SEE NOTE) TEST POINT
TEHOZ OUTPUT LOW/HIGH DISABLE LOAD CIRCUIT
2.27V 91 OUTPUT 50pF (SEE NOTE) TEST POINT
NOTE: Includes jig and stray capacitance.
Burn-In Circuits
MD82C86H CERDIP
VCC R1 F2 R1 F2 R1 F2 R1 F2 R1 F2 R1 F2 R1 F2 R1 F2 R1 9 10 12 R1 11 VCC 8 13 A A A R3 7 14 A 6 15 A VCC R2 5 16 A 4 17 3 18 A A 2 19 A 1 20 C1
4-322
82C86H Burn-In Circuits
(Continued) MR82C86H CLCC
VCC F2 F2 R5 F2 R5 R5 F3 R5 C1
3 F2 F2 F2 F2 F2 R5 R5 R5 R5 R5 4 5 6 7 8 9 R4
2
1
20
19 18 17 16 R5 15 R5 14 R5 R5 R5 F3 F3 F3 F3 F3
10
11 R4
12 R5
13 R5
F0
F1
F3
F3
NOTES: 1. VCC = 5.5V 0.5V, GND = 0V 2. VIH = 4.5V 10% 3. VIL = -0.2V to 0.4V 4. R1 = 47k 5% 5. R2 = 2.4k 5% 6. R3 = 1.5k 5% 7. R4 = 1k 5% 8. R5 = 5k 5% 9. C1 = 0.01F minimum 10. F0 = 100kHz 10% 11. F1 = F0/2, F2 = F1/2, F3 = F2/2
4-323
82C86H Die Characteristics
DIE DIMENSIONS: 138.6 x 155.5 x 19 1mils METALLIZATION: Type: Si - Al Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 8kA 1kA WORST CASE CURRENT DENSITY: 1.47 x 105 A/cm2
Metallization Mask Layout
82C86H
A2
A1
A0
VCC
B0
B1
B2
A3 A4 B3
B4
A5 B5 A6
A7
OE
GND
T
B7
B6
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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